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FFP30S60S
— STEALTH? II Diode
www.fairchildsemi.com
3
?2007 Fairchild Semiconductor Corporation
FFP30S60S Rev.C1
Typical Performance Characteristics
Figure 3. Typical Forward Voltage Drop
Figure 4. Typical Reverse Current
vs. Forward Current vs. Reverse Voltage
Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time
vs. di
F/dt
Figure 7. Typical Reverse Recovery
Figure 8.
Forward Current Derating Curve
Current vs. di
F/dt
1
012345
10
100
75
oC
TC
= 125
oC
Forward Current, I
F
[A]
Forward Voltage, V
F
[V]
25
oC
200
100 200 300 400 500 600
0.01
10
0.1
1
10
100
1000
TC
= 125
oC
TC
= 25
oC
TC
= 75
oC
Reverse Current , I
R
[
?
A
]
Reverse Voltage, VR
[V]
0
0.1 1 10 100
70
140
210
280
350
Typical Capacitance
at 0V = 271 pF
Capacitances , Cj [pF]
Reverse Voltage, VR[V]
20
100 150 200 250 300
40
60
80
100
TC
= 75
oC
TC
= 25
oC
TC
= 125
oC
Reverse Recovery Time, t
rr
[ns]
diF/dt [A/?s]
025 50 75 100 125 150
10
20
30
40
50
60
70
Average Forward Current, I
F(AV)
[A]
Case temperature, TC
[oC]
0
100 150 200 250 300di
F/dt [A/?s]
2
4
6
8
10
TC
= 125
oC
TC
= 25
oC
TC
= 75
oC
Reverse Recovery Current, I
rr
[A]
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